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| SML100C4 TO-254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 20.07 (0.790) 20.32 (0.800) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC VDSS ID(cont) RDS(on) 3.81 (0.150) BSC 1000V 3.6A 9 4.009 Pin 1 - Drain Pin 2 - Source Pin 3 - Gate D * Faster Switching * Lower Leakage * TO-254 Hermetic Package G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 1000 3.6 14.4 30 125 1.0 -55 to +150 300 V A V W W/C C Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. THERMAL CHARACTERISTICS Characteristic RGJC RGJA Junction to Case Junction to Ambient Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Min. Typ. Max. Unit 1.00 50 C/W Semelab plc. 6/99 SML100C4 STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) Characteristic BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250A VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 3.6 4.00 Min. 1000 250 1000 100 4 Typ. Max. Unit V A nA V A 9 DYNAMIC CHARACTERISTICS Characteristic CDC Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Drain to Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions f = 1MHz VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.89 Min. Typ. 15 805 115 37 35 4.3 18 10 12 33 16 Max. Unit 22 950 160 60 55 7 27 20 24 50 32 ns nC pF pF SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic IS ISM VSD trr Qrr Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s 290 1.65 Min. Typ. Max. Unit 3.6 14.4 1.3 580 3.3 A V ns C SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 SOA2 ILM Safe Operating Area Safe Operating Area Inductive Current Clamped 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. VDS = 0.4VDSS , IDS = PD / 0.4VDSS , t = 1 Sec. IDS = ID [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec. Min. 125 125 3.6 Typ. Max. Unit W A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 6/99 |
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